Analytical model of signal amplification in silicon waveguides

作     者：孟凡 余重秀 苑金辉 

作者机构：State Key Laboratory of Information Photonics and Optical CommunicationsBeijing University of Post and Telecommunications 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2012年第21卷第7期

页      面：320-324页

核心收录：

学科分类：070207[理学-光学] 07[理学] 0702[理学-物理学] 

基　　金：Project supported by the National Basic Research Program of China (Grant No. 2010CB327605) the Discipline Co-construction Project of Beijing Municipal Commission of Education, China (Grant No. YB20081001301) the Fundamental Research Funds for Central Universities, China (Grant No. 2011RC008) 

主　　题：parametric amplification stimulated Raman scattering silicon waveguides Raman con-tribution fraction 

摘      要：In this paper, an analytical model to investigate the parametric amplification （PA） and the PA ＋ stimulated Raman scattering （SRS） in silicon waveguides is put forward. When two pump signals are employed, the PA bandwidth of the probe signal is so large that the Raman contribution has to be considered. When Raman contribution fraction f is set to be 0, only the PA occurs to amplify the probe signal, and when f is set to be 0.043, the PA and the SRS amplify the probe signal at the same time. The signal amplifications of both single and dual pump schemes are investigated by using this model. With this model, three main affecting factors, i.e., zero dispersion wavelength （ZDWL）, third-order dispersion （TOD）, and fourth-order dispersion （FOD）, are discussed in detail.