Growth properties of gallium oxide on sapphire substrate by plasma-assisted pulsed laser deposition

作     者：Congyu Hu Katsuhiko Saito Tooru Tanaka Qixin Guo 

作者机构：Department of Electrical and Electronic Engineering Synchrotron Light Application Center Saga University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2019年第40卷第12期

页      面：121-125页

核心收录：

学科分类：0808[工学-电气工程] 080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：partially supported by the Scientific Research (No. 16K06268) the Partnership Project for Fundamental Technology Researches of the Ministry of Education, Culture, Sports, Science and Technology, Japan 

主　　题：wide bandgap gallium oxide oxygen radical pulsed laser deposition plasma 

摘      要：Gallium oxide was deposited on a c-plane sapphire substrate by oxygen plasma-assisted pulsed laser deposition(PLD).An oxygen radical was generated by an inductive coupled plasma source and the effect of radio frequency(RF)power on growth rate was investigated.A film grown with plasma assistance showed 2.7 times faster growth rate.X-ray diffraction and Raman spectroscopy analysis showedβ-Ga2 O3 films grown with plasma assistance at 500℃.The roughness of the films decreased when the RF power of plasma treatment *** of these films was at least 80%and showed sharp absorption edge at 250 nm which was consistent with data previously reported.