Effect of mechanical force on domain switching in BiFeO3 ultrathin films

作     者：ShiLu Tian Can Wang Yong Zhou Yu Feng XiaoKang Yao Chen Ge Meng He GuoZhen Yang KuiJuan Jin ShiLu Tian;Can Wang;Yong Zhou;Yu Feng;XiaoKang Yao;Chen Ge;Meng He;GuoZhen Yang;KuiJuan Jin

作者机构：Institute of PhysicsChinese Academy of SciencesBeijing 100190China University of Chinese Academy of SciencesBeijing 100049China Songshan Lake Materials LaboratoryDongguan 523808China 

出 版 物：《Science China(Physics,Mechanics & Astronomy)》 (中国科学：物理学、力学、天文学（英文版）)

年 卷 期：2020年第63卷第1期

页      面：93-99页

核心收录：

学科分类：081702[工学-化学工艺] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the National Key R&D Program of China(Grant No.2017YFA0303604) the National Natural Science Foundation of China(Grant Nos.11874412,11674385,11721404,and 11404380) the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(Grant No.XDB07030200) 

主　　题：BFO flexoelectricity mechanical writing ferroelectric domain reversal 

摘      要：Ferroelectric polarization can be switched by an external applied electric field and may also be reversed by a mechanical force via flexoelectricity from the strain *** this study,we report the mechanical writing of an epitaxial BiFeO3(BFO)thin film and the combined action of an applied mechanical force and electric field on domain switching,where the mechanical force and electric field are applied using the tip of atomic force *** the applied force exceeds the threshold value,the upward polarization of the BFO thin film can be reversed by pure mechanical force via flexoelectricity;when an electric field is simultaneously applied,the mechanical force can reduce the coercive electric field because both the piezoelectricity from the homogeneous strain and the flexoelectricity from strain gradient contribute to the internal electric field in the *** mechanically switched domains exhibit a slightly lower surface potential when compared with that exhibited by the electrically switched domains due to no charge injection in the mechanical ***,both the mechanically and electrically switched domains exhibit a tunneling electroresistance in the BFO ferroelectric tunnel junction.