Efficient Slew-Rate Enhanced Operational Transconductance Amplifier
Efficient Slew-Rate Enhanced Operational Transconductance Amplifier作者机构:School of Microelectronics and Solid-State Electronics University of Electronic Science and Technology of China
出 版 物:《Journal of Electronic Science and Technology》 (电子科技学刊(英文版))
年 卷 期:2015年第13卷第1期
页 面:14-19页
核心收录:
学科分类:080902[工学-电路与系统] 0809[工学-电子科学与技术(可授工学、理学学位)] 080202[工学-机械电子工程] 08[工学] 0802[工学-机械工程]
基 金:supported in part by the National Natural Science Foundation of China under Grant No.61274027 the National Key Laboratory of Analog Integrated Circuit under Grant No.9140c90503140c09048
主 题:Efficient gain-bandwidth product operational transconductance amplifier slew rate
摘 要:Today, along with the prevalent use of portable equipment, wireless, and other battery powered systems, the demand for amplifiers with a high gain-bandwidth product(GBW), slew rate(SR), and at the same time very low static power dissipation is growing. In this work, an operational transconductance amplifier(OTA) with an enhanced SR is proposed. By inserting a sensing resistor in the input port of the current mirror in the OTA, the voltage drop across the resistor is converted into an output current containing a term in proportion to the square of the voltage, and then the SR of the proposed OTA is significantly enhanced and the current dissipation can be reduced. The proposed OTA is designed and simulated with a 0.5μm complementary metal oxide semiconductor(CMOS) process. The simulation results show that the SR is 4.54V/μs, increased by 8.25 times than that of the conventional design, while the current dissipation is only 87.3%.