A New Method of Photopatterning with LB Films Based on a Chemically Amplified Mechanism
A New Method of Photopatterning with LB Films Based on a Chemically Amplified Mechanism作者机构:Department of Chemistry Zhengzhou University Zhengzhou 450052 P. R. China Institute of Multidisciplinary Research for Advanced Materials Tohoku University Sendai 980-8577 Japan
出 版 物:《Chemical Research in Chinese Universities》 (高等学校化学研究(英文版))
年 卷 期:2006年第22卷第4期
页 面:543-546页
核心收录:
学科分类:081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 070305[理学-高分子化学与物理] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0703[理学-化学]
基 金:Supported by a Grant-in-Aid for Scientific Research from the Japanese Ministry of Education Sports and Culture( No.14205130) and Natural Science Foundation of Henan Province(No. 0611020100)
主 题:LB film Copolymer Photopatterning Chemically amplified resist
摘 要:A new approach to introducing a photoacid generator(PAG) into Langmuir-Blodgett (LB) films to draw photopatterns as a lithographic process is described here. The chemically amplified positive-tone resist system used here consists of two components : a copolymer, poly ( dodecrylacrylamide-co-4-t-butyloxylvinyl-phenylcarbonate ) [ P ( DDA-t- BVPC53 ) ] and a PAG, tri (2,3-dibromopropyl) isocyanurate ( TDBPIC ). In the two-component system, the acid generated by the PAG catalyzes the deprotection reaction of P( DDA-t-BVPC53), to remove the tert-butoxycarbonyl group(t-BOC) in the exposed region during the postexposure baking process, thus rendering the exposed region soluble to alkaline aqueous solvents to form a positive tone. Photolithographic properties of the LB films have been evaluated. The patterns can be resolved with a resolution of 1 μm line width by UV irradiation, followed by development with an alkaline solution. The LB films can be used to generate etched gold relief images on a glass substrate via an aqueous iodide, like ammonium iodide, in alcohol/water as the etchant. The etch resistance of such LB films is sufficiently good, allowing patterning of a gold film suitable for photomask fabrication.