Optoelectronic and electrochemical behaviour of γ-CuI thin films prepared by solid iodination process

作     者：Karthik Kumar Chinnakutti Vengatesh Panneerselvam Durai Govindarajan Ajith kumar Soman Kuppusami Parasuraman Shyju Thankaraj Salammal 

作者机构：Centre of Excellence for Energy Research Sathyabama Institute of Science and Technology Centre for Nanoscience and Nanotechnology Sathyabama Institute of Science and Technology 

出 版 物：《Progress in Natural Science:Materials International》 (自然科学进展·国际材料(英文))

年 卷 期：2019年第29卷第5期

页      面：533-540页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：MHRD  Govt.of India for the financial support (5-8/2014-TS.Ⅶ) to establish Centre of Excellence for Energy Research at Sathyabama Institute of Science and Technology 

主　　题：Copper iodide Solid iodination Hole mobility Cyclic voltammetry 

摘      要：A simple and efficient solid iodination method has been proposed for the fabrication of p-type γ-CuI thin *** structural,morphological,optical,electrical and electrochemical properties have been investigated in order to serve as an effective hole-transporting layer in solid-state solar *** fabricated films exhibited p-type conductivity with resistivity of 7.0×10;Ωcm,the hole concentration of ～1.13×10;cm;and the mobility of 18.34 cm;V;s;.The cyclic voltammetry result shows a maximum specific capacitance of 43 mF/cm;at a scan rate of 10 mV/*** cyclic stability and capacitance retention were found to be 99.7%.These findings demonstrate that γ-CuI film can be a potential candidate for multiple applications,such as a hole transporting material for solid-state solar cells and electrochemical supercapacitor.