INVESTIGATION ON DEPOSITIONS AND HARDNESS CHARACTERISTICS OF a-SiC:H FILMS
INVESTIGATION ON DEPOSITIONS AND HARDNESS CHARACTERISTICS OF a SiC:H FILMS作者机构:Taiyuan Univ of Technology Taiyuan China
出 版 物:《Acta Metallurgica Sinica(English Letters)》 (金属学报(英文版))
年 卷 期:1999年第12卷第5期
页 面:761-764页
核心收录:
学科分类:080503[工学-材料加工工程] 08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)]
主 题:a SiC:H film sputtering hardness
摘 要:In this paper, a deposition feature of a SiC:H films deposited by a RF sputtering system and a effect on the hardness of the films with various deposition conditions are investigated, and the effects of the silicon on a C:H are studied. It follows from the results that the properties of hardness can be changed with the depositing conditions. An increase of silane in the gas phase allows to deposit a SiC:H having tetrahedral structure. The sets of deposition conditions by which the different types of a SiC:H films can be deposited are obtained.