An efficient approach to characterizing and calculating carrier loss due to heating and barrier height variation in vertical-cavity surface-emitting lasers

作     者：吴坚 H.D.Summers 

作者机构：School of Physics and Nuclear Energy EngineeringBeijing University of Aeronautics and Astronautics School of Physics and AstronomyCardiff University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2010年第19卷第1期

页      面：361-365页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0803[工学-光学工程] 

主　　题：semiconductor laser vertical cavity surface emitting laser quantum well thermal carrier loss 

摘      要：It is important to determine quantitatively the internal carrier loss arising from heating and barrier height variation in a vertical-cavity surface-emitting quantum well laser （VCSEL）. However, it is generally difficult to realize this goal using purely theoretical formulas due to difficulty h, deriving the parameters relat^i~g to the quantum well structure. In this paper, we describe an efl：icient approach to characterizing and calculating the carrier loss due to the heating and the barrier height change in the VCSEL. In the method, the thermal carrier loss mechanism is combined with gain measurement and calculation. The carrier loss is re-characterized in a calculable form by constructing the threshold current and gain detuning-related loss current using the measured gain data and then substituting them for the quantum well-related parameters in the formula. The result can be expressed as a product of an exponential weight factor linked to the barrier height change and the difference between the threshold current and gain detuning-related loss current. The gain variation at cavity frequency due to thermal carrier loss and gain detuning processes is measured by using an AllnGaAs-AIGaAs VCSEL structure. This work provides a useful approach to analysing threshold and loss properties of the VCSEL, particularly, gain offset design for high temperature operation of VCSELs.