Study on ChemFET NO2 Gas Sensor Array

作     者：Guangzhong Xie~1 Junsheng Yu~1 Huilin Tai~1 Wusheng Suo~1 Yadong Jiang~1 Bangchao Yang~2 (1.School of Optoelectronic Information,University of Electronic Science & Technology of China,Chengdu 610054,China) (2.School of Microelectronics and Solid-State Electronics,University of Electronic Science & Technology of China,Chengdu 610054,China) 

出 版 物：《稀有金属材料与工程》 (Rare Metal Materials and Engineering)

年 卷 期：2006年第S3期

页      面：104-105页

核心收录：

学科分类：080202[工学-机械电子工程] 08[工学] 0802[工学-机械工程] 

主　　题：NO2 sensitivity ChemFET sensor self-assembly polyaniline poly (acrylic acid) 

摘      要：Based on conventional metal-oxide-semiconductor field-effect transistor （MOSFET）,a novel kind of chemical field-effect transistor （ChemFET） gas sensor array has been designed and *** obtained sensor consists of self-assembly polyaniline （PAN） composite film containing poly（acrylic acid） （PAA） which was used as gate material of MOSFET instead of conventional metallic *** UV-Vis absorption spectra of PAN/PAA films were *** NO2gas sensitive property of the ChemFET sensor array was also *** show that the drain current of devices increases with increasing of back-side voltage,and decreases with the increase of NO2concentration when the NO2concentration is below 20μg/*** temperature dependence of ChemFET sensor array shows that the drain current of ChemFET sensor decreases with increasing of temperature.