Preparation of Bi_(2-x)Sb_xTe_3 thermoelectric films by electrodeposition

作     者：Qinghua Huang Wei Wang Falong Jia Zhirong Zhang 

作者机构：Department of Applied Chemistry School of Chemical Engineering and Technology Tianjin University Tianjin 300072 China 

出 版 物：《Journal of University of Science and Technology Beijing》 (北京科技大学学报（英文版）)

年 卷 期：2006年第13卷第3期

页      面：277-280页

核心收录：

学科分类：081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术] 

基　　金：This work was financially supported by the National Key Project on Basic Research of China (No.ZM200103A01) 

主　　题：thermoelectric films bismuth antimony telluride compounds electrodeposition Seebeck coefficient morphology 

摘      要：Bi2-xSbxTe3 thermoelectric films were electrochemically deposited from the solution containing Bi^3＋, HTeO2^＋and SbO^＋. ESEM （environmental scanning electron microscope） investigations indicated that the crystalline state of Bi2-xSbxTe3 films transformed from equiaxed crystal to dendritic crystal with the negative shift of deposition potential. XRD and EDS were used to characterize the structure and composition of the electrodeposited films. The Seebeck coefficient and the temperature dependence of the resistance of Bi2-xSbxTe3 films were measured. The results showed that the composition of the film electrodeposited at -0.5 V is Bi2-xSbxTe3 with the largest Seebeck coefficient of 213 μV·K^-1.