Thermoelectric properties of BiSb_x (x=0.6-0.8) thermoelectric materials fabricated by different processing
Thermoelectric properties of BiSb_x (x=0.6-0.8) thermoelectric materials fabricated by different processing作者机构:Univ Sci & Technol Beijing Lab Special Ceram & Powder Met Beijing 100083 Peoples R China
出 版 物:《Journal of University of Science and Technology Beijing》 (北京科技大学学报(英文版))
年 卷 期:2003年第10卷第2期
页 面:65-67页
核心收录:
学科分类:08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)]
主 题:thermoelectric property thermoelectric material ultra high pressuresintering BiSb_x
摘 要:In order to improve the thermoelectric properties, hot-pressing sintering andultra high pressure sintering methods were adopted to fabricate BiSb_x. The phase and crystalstructures were determined by X-ray diffraction analysis (XRD). The thermoelectric properties weremeasured at 303 K along the direction parallel to the pressing direction. The electric conductivityof the samples was measured at 303 K by the four-probe technique. To measure the Seebeckcoefficient, heat was applied to the samples placed between two Cu discs. The thermoelectricelectromotive force (E) was measured upon applying small temperature differences (DELTA T2 deg C)between the both ends of the samples. The Seebeck coefficient of the samples was determined from thevalue of E/DELTA T. The results indicate that the thermoelectric properties of the samplesfabricated by UHPS (ultra high pressure sintering) method are much higher than that by HPS (hotpressing sintering) method and have the highest values at x=0.7.