Effect of Sputtering Parameters on Film Composition, Crystal Structure, and Coercivity of SmCo Based Films Deposited on Si （100） Substrates

作     者：薛刚 彭龙 张怀武 XUE Gang;PENG Long;ZHANG Huai-Wu

作者机构：State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2010年第27卷第1期

页      面：231-233页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0704[理学-天文学] 070301[理学-无机化学] 

基　　金：国家973计划 International S&T Cooperation Program of China 

主　　题：Films Packaging materials Experimentation Concentrates Concentrating Processing 

摘      要：The sputtering parameter mediated composition （SPMC） effect of 3.0-μm-thick SmCo-based films is experimentally and theoretically studied. The experimental results give a clear indication that the Sm concentration increases with the decreasing sputtering power or with the increasing Ar gas pressure, which are in agreement with the calculated values when the preferential sputtering effect is disregarded. The SPMC effect provides an opportunity for the same composite target to fabricate films with an Sm concentration varying from 13.8at.% to 17.3at.%, which is reasonable for the magnetic phase transformation （Sm2Co17→SmCo7→SmCo5） and the enhanced coercivity.