Orientation of Bi_(3.2)La_(0.8)Ti_3O_(12) Ferroelectric Thin Films with Different Annealing Schedules

作     者：贺海燕 HE Haiyan (School of Materials Science and Engineering, Shaanxi University of Science and Technology, Xi’an 710021, China)

作者机构：School of Materials Science and Engineering Shaanxi University of Science and Technology 

出 版 物：《Journal of Wuhan University of Technology(Materials Science)》 (武汉理工大学学报（材料科学英文版）)

年 卷 期：2009年第24卷第3期

页      面：359-362页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

主　　题：Bi3.2La0.8Ti3O12 ferroelectric film technologic condition orientation 

摘      要：Fatigue-free Bi3.2La0.8Ti3O12 ferroelectric thin films were successfully prepared on p-Si （100） substrates using metalorganic solution deposition process. The orientation and formation of 5-layers thin films were studied under different processing conditions using XRD. Experimental results indicate that increase in annealing time at 700 ℃ after preannealing for 10 min at 400 ℃ can remarkably increase （200）-orientation of the films derived from the precursor solutions with two contents of citric acid. Meanwhile, high content of citric acid increases the film thickness and is conducive to the α-orientation of the films with the preannealing, and low concentration of the solution is conducive to the c-orientation of the films without the preannealing.