Fabrication and Thermally Sensitive Properties of VOx Thin Films by Sol-Gel Method

作     者：Shenglin Jiang~1 Bowu Yan~(1,2) Dongxiang Zhou~1 Meidong Liu~1 (1.Department of Electronic Science & Technology,Huazhong University of Science & Technology,Wuhan 430074,China) (2.Huangshi Institute of Technology,Huangshi 435003,China) 

出 版 物：《稀有金属材料与工程》 (Rare Metal Materials and Engineering)

年 卷 期：2006年第S3期

页      面：559-560页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

主　　题：VO_x thin films sol-gel method TCR 

摘      要：For the high temperature coefficient of resistivity （TCR） of VOxthin films,the preparation process including the heat-treating and the application of seed layer,has been *** the films were prepared without a seed layer, heated in air for 2 h,and then in N2for 2 h at 470℃,the TCR of about 1.07% K-1(3.75% K-1at 45℃～65℃) was *** R20℃/R100℃was about 28.75,while the R20℃/R100℃of the thin films prepared on a seed layer was *** X-ray diffraction （XRD） showed that better heating conditions led to less phase compositions and higher V2O5diffraction peak,which led to higher *** experiment results showed that the optimum heating condition was at 470℃for 4 h.