Influence of pump intensity on atomic spin relaxation in a vapor cell
Influence of pump intensity on atomic spin relaxation in a vapor cell作者机构:State Key Laboratory of Quantum Optics and Quantum Optics DevicesInstitute of Opto-ElectronicsShanxi UniversityTaiyuan 030006China Collaborative Innovation Center of Extreme OpticsShanxi UniversityTaiyuan 030006China College of Physics and Electronics EngineeringShanxi UniversityTaiyuan 030006China
出 版 物:《Chinese Physics B》 (中国物理B(英文版))
年 卷 期:2019年第28卷第11期
页 面:339-343页
核心收录:
学科分类:080901[工学-物理电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程]
基 金:supported by the National Key R&D Program of China(Grant No.2017YFA0304502) the National Natural Science Foundation of China(Grant Nos.11634008,11674203,11574187,and 61227902)
主 题:atomic magnetometer atomic spin relaxation optical pumping
摘 要:Atomic spin relaxation in a vapor cell, which can be characterized by the magnetic resonance linewidth(MRL),is an important parameter that eventually determines the sensitivity of an atomic magnetometer. In this paper, we have extensively studied how the pump intensity affects the spin relaxation. The experiment is performed with a cesium vapor cell, and the influence of the pump intensity on MRL is measured at room temperature at zero-field resonance. A simple model with five atomic levels of a Λ-like configuration is discussed theoretically, which can be used to represent the experimental process approximately, and the experimental results can be explained to some extent. Both the experimental and the theoretical results show a nonlinear broadening of the MRL when the pump intensity is increasing. The work helps to understand the mechanism of pump induced atomic spin relaxation in the atomic magnetometers.