The Efficiency of a p-n Solar Diode as a Function of the Recombination Velocity within the Depletion Layer
The Efficiency of a p-n Solar Diode as a Function of the Recombination Velocity within the Depletion Layer作者机构：Physics Department College of Science for Girls Dammam University Dammam KSA Physics Department Faculty of Education Ain Shams University Cairo Egypt
出 版 物：《Optics and Photonics Journal》 (光学与光子学期刊（英文）)
年 卷 期：2012年第2卷第4期
页 面：326-331页
学科分类：07[理学] 0701[理学-数学] 070101[理学-基础数学]
主 题：Efficiency Diffusion Equation Recombination Velocity
摘 要：The role of the carrier’s recombination velocity Si within the depletion Layer of p-n junction solar cell and the external bias voltage Va across the junction in determining the current density “J through the cell is revealed. The unsteady carrier diffusion equation is solved under illumination conditions considering a source spectral function G(λ). The efficiency of the device as a function of Si , Va , G(λ) is obtained. Computations considering a silicon solar cell are given as an illustrative example.
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