Thermoelectric Properties of Czochralski GeSi Crystal

作     者：索开南 张维连 林健 赵嘉鹏 周子鹏 

作者机构：Semiconductor Material InstituteHebei University of Technology The 46th Research Institute CETC 

出 版 物：《Chinese Journal of Structural Chemistry》 (结构化学（英文）)

年 卷 期：2007年第26卷第10期

页      面：1247-1251页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 070301[理学-无机化学] 

基　　金：the Natural Science Foundation of Hebei Province (No. 500016) 

主　　题：SiGe alloy single crystal thermoelectric properties Seebeck coefficient 

摘      要：In order to discuss the application possibility of SiGe crystal in thermoelectric materials, we investigated the thermoelectric properties of several silicon-germanium alloys with different content, orientation and electric conductive type. As discussed in the experiment result, the absolute value of Seebeck coefficient fluctuates from 300 to 600 μV/K in the whole temperature range. In the present paper, the relationship of Seebeck coefficient against content, orientation and electric conductive type is summarized in detail. The Seebeck coefficient of the sample with 〈111〉 orientation is smaller than that in 〈100〉 at the same temperature. Absolute value of P-type is larger than that of N-type except pure Ge. But as the temperature increases, the absolute value of pure Ge decreases many times as quickly as that of other specimens. In addition, the specimens of bulk GeSi alloy crystals for experiment were grown by the Czoehralski method through varying the pulling rate during the growing process.