Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells

作     者：Chang-Fu Li Kai-Ju Shi Ming-Sheng Xu Xian-Gang Xu Zi-Wu Ji 李长富;时凯居;徐明升;徐现刚;冀子武

作者机构：School of MicroelectronicsShandong UniversityJinan 250100China School of Physics and Electronic EngineeringTaishan UniversityTaian 271000China Key Laboratory of Functional Crystal Materials and Devices(Ministry of Education)Shandong UniversityJinan 250100China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2019年第28卷第10期

页      面：541-545页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.51672163,51872167,and 61504044) the Major Research Plan of the National Natural Science Foundation of China(Grant No.91433112) 

主　　题：photoluminescence multiple quantum wells localization effect light-emitting diodes 

摘      要：The photoluminescence(PL) properties of blue multiple InGaN/GaN quantum well(BMQW) and green multiple InGaN/GaN quantum well(GMQW) formed on a single sapphire substrate are investigated. The results indicate that the peak energy of GMQW-related emission(PG) exhibits more significant S-shaped dependence on temperature than that of BMQW-related emission(PB), and the excitation power-dependent carrier-scattering effect is observed only in the PG emission;the excitation power-dependent total blue-shift(narrowing) of peak position(line-width) for the PGemission is more significant than that for the PBemission;the GMQW shows a lower internal quantum efficiency than the BMQW. All of these results can be attributed to the fact that the GMQW has higher indium content than the BMQW due to its lower growth temperature and late growth, and the higher indium content in the GMQW induces a more significant compositional fluctuation, a stronger quantum confined Stark effect, and more non-radiative centers.