New 3D Aware Formulation of MoM-GEC Method for Studying Planar Structures with Vertical Sources

作     者：Oueslati Basma Ben Salah Taha Larbi Chiraz Aguili Taoufik Oueslati Basma;Ben Salah Taha;Larbi Chiraz;Aguili Taoufik

作者机构：Communication System Laboratory Sys’Com National Engineering School of Tunis University Tunis El Manar Tunis Tunisia 

出 版 物：《Journal of Electromagnetic Analysis and Applications》 (电磁分析与应用期刊（英文）)

年 卷 期：2016年第8卷第4期

页      面：79-94页

学科分类：07[理学] 0701[理学-数学] 070101[理学-基础数学] 

主　　题：Admittance Operator MoM-GEC 3D Discontinuities Vertical Source 

摘      要：This paper proposes a generalization of the MoM-GEC method [1] needed for studying planar structures excited with a source located at perpendicular plan relative to circuit plan. A general formulation is detailed to allow modeling excitation of a planar structure with one or more sources located in plans other than the circuit plan. The numerical approach elaborated is based on the definition of new admittance operators and rotational transformations describing the transition from one plan to another. To validate this approach, we consider the case of a single source located in the perpendicular plan to the circuit.