In-Situ Observation of SiC Bulk Single Crystal Growth by XRD System

作     者：Tomohisa Kato 

作者机构：National Institute of Advanced Industrial Science and Technology Tsukuba Central Ibaraki 305-8568 Japan 

出 版 物：《Journal of Rare Earths》 (稀土学报（英文版）)

年 卷 期：2006年第24卷第z1期

页      面：49-53页

核心收录：

学科分类：0709[理学-地质学] 0819[工学-矿业工程] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0708[理学-地球物理学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：METI NSS Program (Ultra-Low Loss Power Device Technology) The high-resolution X-ray topography was performed at BL20B2 in the SPring-8 with the approval of the Japan Synchrotron Radiation Research Institute(2005A0403-ND3c-np) 

主　　题：Defect Growth from vapor Semiconducting materials Single crystal growth X-ray diffraction X-ray topography 

摘      要：In-situ analysis for SiC bulk single crystal growth was reported using vertical X-ray diffractometer system. A furnace for SiC sublimation growth combined with the XRD system which possessed three kinds of functions including topography, rocking curve measurement and crystal growth rate monitoring was developed. These functions could contribute as a powerful tool finding the optimum growth condition by dynamic observation in the crucible. In this study, the in-situ X-ray topographs succeeded to capture dynamic elongation of defects and dislocation generated in the SiC growing crystals. The in-situ rocking curve measurement reviled appearance of mosaic structure in the SiC crystal grown with high growth rate. The in-situ growth rate monitoring also succeeded very precisely using the direct X-ray beam absorption. On the base of findings and facts obtained by the in-situ observations, the importance for the SiC growth was discussed.