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Systematic Approaches of UWB Low-Power CMOS LNA with Body Biased Technique

Systematic Approaches of UWB Low-Power CMOS LNA with Body Biased Technique

作     者:Meng-Ting Hsu Kun-Long Wu Wen-Chen Chiu 

作者机构:Department and Institute of Engineering National Yunlin University of Science and Technology Taiwan Microwave Communication and Radio Frequency Integrated Circuit Lab Department and Institute of Engineering National Yunlin University of Science and Technology Taiwan 

出 版 物:《Wireless Engineering and Technology》 (无线工程与技术(英文))

年 卷 期:2015年第6卷第3期

页      面:61-77页

学科分类:080902[工学-电路与系统] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 

主  题:Body Bias Common Source Low Noise Amplifier (LNA) Low Power RFCMOS Ultra-Wideband (UWB) 

摘      要:This paper presents research on a low power CMOS UWB LNA based on a cascoded common source and current-reused topology. A systematic approach for the design procedure from narrow band to UWB is developed and discussed in detail. The power reduction can be achieved by using body biased technique and current-reused topology. The optimum width of the major transistor device M1 is determined by the power-constraint noise optimization with inner parasitic capacitance between the gate and source terminal. The derivation of the signal amplification S21 by high frequency small signal model is displayed in the paper. The optimum design of the complete circuit was studied in a step by step analysis. The measurements results show that the proposed circuit has superior S11, gain, noise figure, and power consumption. From the measured results, S11 is lower than -12 dB, S22 is lower than -10 dB and forward gain S21 has an average value with 12 dB. The noise figure is from 4 to 5.7 dB within the whole band. The total power consumption of the proposed circuit including the output buffer is 4.6 mW with a supply voltage of 1 V. This work is implemented in a standard TSMC 0.18 μm CMOS process technology.

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