Modulation of the electronic states of perovskite SrCrO3 thin films through protonation via low-energy hydrogen plasma implantation approaches
通过经由低精力的氢血浆培植的 protonation 的 perovskite SrCrO 3 薄电影的电子状态的调整来临作者机构:Fujian Provincial Key Laboratory of Semiconductors and ApplicationsCollaborative Innovation Center for Optoelectronic Semiconductors and Efficient DevicesDepartment of PhysicsXiamen UniversityXiamen 361005China Shenzhen Key Laboratory of Special Functional MaterialsCollege of Materials Science and EngineeringShenzhen UniversityShenzhen 518060China School of Materials and EnergyUniversity of Electronic Science and Technology of ChinaChengdu 611731China State Key Laboratory of Physical Chemistry of Solid SurfacesCollege of Chemistry and Chemical EngineeringXiamen UniversityXiamen 361005China National Synchrotron Radiation LaboratoryUniversity of Science and Technology of ChinaHefei 230029China Center for Functional NanomaterialsBrookhaven National LaboratoryUptonNY 11973-5000USA Physical Sciences DivisionPhysical and Computational Sciences DirectoratePacific Northwest National LaboratoryRichlandWA 99352USA
出 版 物:《Frontiers of physics》 (物理学前沿(英文版))
年 卷 期:2020年第15卷第1期
页 面:43-50页
核心收录:
学科分类:07[理学] 070204[理学-等离子体物理] 0702[理学-物理学]
基 金:the valuable discussion with X.P.Yang and the provision of synchrotron radiation at NSRL.This project was funded by National Natural Science foundation of China(Grant No.11704317) China Postdoctoral Science Foundation(Grant No.2016M602064) We also acknowledge the supports by the Natural Science Foundation of Shenzhen University(Grant No.827-000198)
主 题:transition metal oxide thin film metal-insulator transition hydrogenation
摘 要:Hydrogenation of transition metal oxides offers a powerful platform to tailor physical functionalities as well as for potential applications in modern electronic *** ideal nondestructive and efficient hydrogen incorporation approach is important for the realistic technological *** demonstrate the proton injection on SrCro3 thin films via an efficient low-energy hydrogen plasma implantation experiments,without destroying the original lattice *** ions accumu-late largely at the interfacial regions with amorphous character which extend about one-third of the total *** ***3(HSCO)thin films appear like exfoliated layers which however retain the fully strained state with distorted perovskite *** doping induces the change of Cr oxidation state from Cr^4+to Cr^3+in HSCO thin films and a transition from metallic to insulat-ing *** investigations suggest an attractive platform in manipulating the electronic phases in proton-based approaches and may offer a potential peeling off strategy for nanoscale devices through low-energy hydrogen plasma implantation approaches.