An Improved Room-Temperature Silicon Terahertz Photodetector on Sapphire Substrates

作     者：Xue-Hui Lu Cheng-Bin Jing Lian-Wei Wang Jun-Hao Chu 鲁学会;敬承斌;王连卫;褚君浩

作者机构：Key Laboratory of Polar Materials and Devices(Ministry of Ed ucation)Institute of Functional MaterialsDepartment of MaterialsSchool of Physics and Electronic ScienceEast China Normal UniversityShanghai 200241 Shanghai Institute of Jnelligen'Electronics&SystemsFudan UniversityShanghai 200433 State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083 

出 版 物：《Chinese Physics Letters》 (中国物理快报(英文版))

年 卷 期：2019年第36卷第9期

页      面：87-90页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0803[工学-光学工程] 

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 61775060 and 61275100 

主　　题：Sapphire 

摘      要：We design and fabricate a good performance silicon photoconductive terahertz detector on sapphire substrates at room *** best voltage responsivity of the detector is 6679 V/W at frequency 300 GHz as well as low voltage noise of 3.8 nV/Hz1/2 for noise equivalent power 0.57 pW/Hz1/*** measured response time of the device is about 9μs,demonstrating that the detector has a speed of110 *** achieved good performance,together with large detector size(acceptance area is 3μm×160μm),simple structure,easy manufacturing method,compatibility with mature silicon technology,and suitability for large-scale fabrication of imaging arrays provide a promising approach to the development of sensitive terahertz room-temperature detectors.