An Improved Room-Temperature Silicon Terahertz Photodetector on Sapphire Substrates
An Improved Room-Temperature Silicon Terahertz Photodetector on Sapphire Substrates作者机构:Key Laboratory of Polar Materials and Devices(Ministry of Ed ucation)Institute of Functional MaterialsDepartment of MaterialsSchool of Physics and Electronic ScienceEast China Normal UniversityShanghai 200241 Shanghai Institute of Jnelligen'Electronics&SystemsFudan UniversityShanghai 200433 State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083
出 版 物:《Chinese Physics Letters》 (中国物理快报(英文版))
年 卷 期:2019年第36卷第9期
页 面:87-90页
核心收录:
学科分类:08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0704[理学-天文学] 0803[工学-光学工程]
基 金:Supported by the National Natural Science Foundation of China under Grant Nos 61775060 and 61275100
主 题:Sapphire
摘 要:We design and fabricate a good performance silicon photoconductive terahertz detector on sapphire substrates at room *** best voltage responsivity of the detector is 6679 V/W at frequency 300 GHz as well as low voltage noise of 3.8 nV/Hz1/2 for noise equivalent power 0.57 pW/Hz1/*** measured response time of the device is about 9μs,demonstrating that the detector has a speed of110 *** achieved good performance,together with large detector size(acceptance area is 3μm×160μm),simple structure,easy manufacturing method,compatibility with mature silicon technology,and suitability for large-scale fabrication of imaging arrays provide a promising approach to the development of sensitive terahertz room-temperature detectors.