An analytical model of the electric field distributions of buried superjunction devices

作     者：黄海猛 陈星弼 

作者机构：State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2013年第34卷第6期

页      面：68-71页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

主　　题：analytical model superjunction devices electric field distributions breakdown voltage 

摘      要：An analytical model of the electric field distributions of buried superjunction structures,based on the charge superposition method and Green＇s function approach,is *** accurate approximation of the exact analytical model of the vertical electric field is also proposed and demonstrated by numerical *** influence of the dimension and doping concentration of each layer on the electric field is discussed in detail,and the breakdown voltage is demonstrated by simulations.