Structural,Transport and Optical Properties of Boron-doped Zinc Oxide Nanocrystalline

作     者：Vinod Kumar R.G.Singh L.P.Purohit R.M.Mehra 

作者机构：Department of PhysicsGurukula Kangri University Department of Electronic ScienceUniversity of Delhi South Campus Maharaja Agrasen College University of Delhi 110 096India School of Engineering & TechnologySharda University 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2011年第27卷第6期

页      面：481-488页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：support from MNRE Project No. 31/7/2004-05/PV-R&D Govt. of India 

主　　题：Zinc oxide Boron Photoluminescence Intragrain B-M shift 

摘      要：The paper has reported the structural,transport and optical properties of boron doped zinc oxide（ZnO：B） thin films grown on glass substrate by sol-gel spin coating *** is observed from the analysis of the X-ray diffraction（XRD） results that the crystalline quality of the films is improved with increasing B concentration.A crystallite size of ～17 nm is obtained for B doped films.A minimum resistivity of 7.9×10-4 Ω.cm is obtained at 0.6 at.% of B concentration in the ZnO：B *** and intragrain cluster scattering are found to dominate the scattering mechanism in ZnO：B *** interference pattern in transmittance spectra shows good homogeneity with a transparency of ～88% in the visible *** band gap of the films is increased from 3.24 to 3.35 eV with increasing B *** gap widening is analyzed in terms of Burstein-Moss *** origin of the broad band photoluminescence（PL） spectra is explained in terms of the intragrain cluster scattering.