Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients

作     者：何益百 陈书明 

作者机构：College of ComputerNational University of Defense Technology Science and Technology on Parallel and Distributed Processing LaboratoryNational University of Defense Technology 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2014年第23卷第7期

页      面：775-779页

核心收录：

学科分类：08[工学] 0827[工学-核科学与技术] 082701[工学-核能科学与工程] 

基　　金：supported by the National Natural Science Foundation of China(Grant No.61376109) 

主　　题：single event effect single event transient parasitic bipolar amplification heavy ion experiments 

摘      要：The contribution of parasitic bipolar amplification to SETs is experimentally verified using two P-hit target chains in the normal layout and in the special layout. For PMOSs in the normal layout, the single-event charge collection is composed of diffusion, drift, and the parasitic bipolar effect, while for PMOSs in the special layout, the parasitic bipolar junction transistor cannot turn on. Heavy ion experimental results show that PMOSs without parasitic bipolar amplification have a 21.4% decrease in the average SET pulse width and roughly a 40.2% reduction in the SET cross-section.