Mechanism of E' center induced by γ ray radiation in silica optical fiber material

作     者：LUO Wenyun XIAO Zhongyin WEN Jianxiang YIN Jianchong WU Wenkai CHEN Zhenyi WANG Zihua WANG Tingyun 

作者机构：School of Communication and Information Engineering Key Laboratory of Specialty Fiber Optics and Optical Access NetworksShanghai University School of Environmental and Chemical Engineering Shanghai Applied Radiation Institute Shanghai University 

出 版 物：《Nuclear Science and Techniques》 (核技术（英文）)

年 卷 期：2013年第24卷第4期

页      面：28-31页

核心收录：

学科分类：070207[理学-光学] 07[理学] 0807[工学-动力工程及工程热物理] 0827[工学-核科学与技术] 0703[理学-化学] 0702[理学-物理学] 0801[工学-力学（可授工学、理学学位）] 

基　　金：Supported by National Program on Key Basic Research Project(973 Program,No.2012CB723405) Natural Science Foundation of China(No.60937003,61077068,61275090,61275051,and 61027015) Shanghai Natural Science Foundation(No.12ZR1411200) 

主　　题：光纤材料 射线辐射 机制 石英 缺陷中心 二氧化硅 机理模型 缺陷产生 

摘      要：The characteristics of the best known defect centers E in silica optical fiber material irradiated with ray were investigated by ESR at room temperature.A mechanism model of production of the E center defect was established.The production of E center includes two processes creation and activation.The strained bonds(or oxygen replacement) in silica networks lead to the creation of new defects whose concentration increases linearly with the dose.The pre-existing defects produce the activation,which tends to saturation.According to this model,the relation of E center concentration changing with irradiation dose was obtained theoretically.The results are in good agreement with the experimental results.