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KLL dielectronic recombination process of He-like to O-like xenon ions

KLL dielectronic recombination process of He-like to O-like xenon ions

作     者:张登红 师应龙 蒋军 董晨钟 小池文博 Zhang Deng-Hong;Shi Ying-Long;Jiang Jun;Dong Chen-zhong;Fumihiro Koike

作者机构:Key Laboratory of Atomic and Molecular Physics&Functional Materials of Gansu ProvinceCollege of Physics and Electronic EngineeringNorthwest Normal UniversityLanzhou 730070China Joint Laboratory of Atomic and Molecular PhysicsNWNU&IMP CASLanzhou 730070China Physics DepartmentSchool of MedicineKitasato University1-15-1 Kitasato228-8555Japan 

出 版 物:《Chinese Physics B》 (中国物理B(英文版))

年 卷 期:2012年第21卷第1期

页      面:163-170页

核心收录:

学科分类:07[理学] 070203[理学-原子与分子物理] 0805[工学-材料科学与工程(可授工学、理学学位)] 0704[理学-天文学] 0702[理学-物理学] 

基  金:Project supported by the National Natural Science Foundation of China(Grant Nos.10774122 and 10876028) the Natural ScienceFoundation of Gansu Province,China(Grant No.1010RJZA014) the Foundation of Northwest Normal University,China(Grant No.NWNU-KJCXGC-03-72) 

主  题:KLL dielectronic recombination resonant strength Breit interaction 

摘      要:In this work, the KLL dielectronic recombination (DR) processes of highly charged He-like to O-like xenon ions are studied systematically by using a DR program, which is based on the multi-configuration Dirac-Fock (MCDF) method. The KLL DR resonant energies and the corresponding resonant strengths are calculated, emphasizing especially the effect of the Breit interaction on the DR strengths. The theoretical KLL DR spectra are obtained and compared with the latest experimental results obtained in the Shanghai Electron Beam Ion Trap.

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