Research on CMOS Mm-Wave Circuits and Systems for Wireless Communications

作     者：JIA Haikun CHI Baoyong KUANG Lixue YU Xiaobao CHEN Lei ZHU Wei WEI Meng SONG Zheng WANG Zhihua 

作者机构：Institute of MicroelectronicsTsinghua University 

出 版 物：《China Communications》 (中国通信（英文版）)

年 卷 期：2015年第12卷第5期

页      面：1-13页

核心收录：

学科分类：080904[工学-电磁场与微波技术] 0810[工学-信息与通信工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080402[工学-测试计量技术及仪器] 0804[工学-仪器科学与技术] 081001[工学-通信与信息系统] 

基　　金：supported in part by the National Natural Science Foundation of China under Grant 61331003 and Grant 61222405 

主　　题：CMOS mm-wave devices VCO PA sell-healing transceiver 

摘      要：This paper lenges in the design of discusses some chal- millimeter-wave （mln- wave） circuits and systems for 5th generation （5G） wireless systems in CMOS process. The properties of some passive and active devices such as inductors, capacitors, transmission lines, translbrmers and transistors in mm-wave frequency band are discussed. Self-healing technique dealing with PVT variation, res- onant mode switching technique to enhance frequency tuning range of voltage controlled oscillator （VCO） and dual mode technique for power amplifier （PA） efficiency enhancement are introduced. At last, A fully-integrated 60 GHz 5 Gb/s QPSK transceiver with the transmit/receive （T/R） switch in 65nm CMOS process is introduced. The measured error vector magnitude （EVM） of the TX is -21.9 dB while the bit error rate （BER） of the RX with a -52 dBm sine-wave input is below 8e-7 when transmitting/receiving 5 Gb/s data. The transceiver is powered by 1.0 V and 1.2 V supply （except the phase-frequency detector and charge-pump in the frequency synthesizer which are powered by 2.5 V supply） and con- sumes 135 mW in TX mode and 176 mW in RX mode.