MODIFICATION OF ABSORPTION SPECTRUM OF GaAs/AlGaAs QUANTUM WELL INFRARED PHOTODETECTOR BY POSTGROWTH ADJUSTMENT

作     者：Y FU YANG Chang-Li 

作者机构：Theoretical Chemistry Department of Biotechnology Royal Institute of Technology AlbaNova S-106 91 Stockholm Sweden East China Normal University North Zhongshen Rd. 3663 200062 Shanghai China 

出 版 物：《红外与毫米波学报》 (Journal of Infrared and Millimeter Waves)

年 卷 期：2006年第25卷第1期

页      面：1-5页

核心收录：

学科分类：080901[工学-物理电子学] 07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 070302[理学-分析化学] 0804[工学-仪器科学与技术] 0703[理学-化学] 0803[工学-光学工程] 

基　　金：TheprojectispartiallysupportedbytheNationalNaturalScienceFoundationofChina(10474020) 

主　　题：吸收光谱 量子阱 红外光电探测器 修正 

摘      要：Quantum well intermixing techniques modify the geometric shape of quantum wells to allow postgrowth *** tuning effect on the optical response property of a GaAs/AlGaAs quantum well infrared photodetector(QWIP) induced by the interdifussion of Al atoms was studied *** assuming an improvement of the heterointerface quality and an enhanced Al interdiffusion caused by postgrowth intermixings,the photoluminescence spectrum shows a blue-shifted,narrower and enhanced photoluminescence *** infrared optical absorption spectrum also shows the expected redshift of the response ***,the variation in the absorption peak intensity depends on the boundary conditions of the photo generated *** high-quality QWIP samples,the mean free path of photocarriers is long so that the photocarriers are largely coherent when they transport across quantum *** this case,the enhanced Al interdiffusion can significantly degrade the infrared absorption property of the *** effects are therefore needed to maintain and/or improve the optical properties of the QWIP device during postgrowth treatments.