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Photoluminescence from Silicon Nanocrystals in Encapsulating Materials

Photoluminescence from Silicon Nanocrystals in Encapsulating Materials

作     者:Z.Deng X.D.Pi J.J.Zhao D.Yang 

作者机构:State Key Laboratory of Silicon Materials and Department of Materials Science and EngineeringZhejiang University 

出 版 物:《Journal of Materials Science & Technology》 (材料科学技术(英文版))

年 卷 期:2013年第29卷第3期

页      面:221-224页

核心收录:

学科分类:07[理学] 0806[工学-冶金工程] 0817[工学-化学工程与技术] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0703[理学-化学] 0802[工学-机械工程] 0702[理学-物理学] 0801[工学-力学(可授工学、理学学位)] 

基  金:supported by the National Natural Science Foundation of China(Nos.50902122 and 50832006) Partial support from R&D Program of Ministry of Education of China (No.62501040202) Innovation Team Project of Zhejiang Province,China(No.2009R50005) Basic Funding for Research at Zhejiang University,China(No.2011FZA4005) Major Scientific program of Zhejiang Province,China(No. 2009C01024-2) 

主  题:Photoluminescence Silicon nanocrystals Epoxy Silicone Quantum yield External quantum efficiency 

摘      要:Naturally oxidized freestanding silicon nanocrystals (Si NCs) are incorporated in commonly used encapsulating materials to explore the photoluminescent application of Si NCs in device structures such as solid-state lighting light-emitting diodes (LEDs) and solar cells. The quantum yield of Si NCs before the incorporation has reached about 45% at the excitation wavelength of 370 nm without any special surface modification. It is found that medium Ioadings, e.g., 5 wt% of Si NCs in encapsulating materials help to obtain high external quantum efficiency (EQE) of the mixtures of Si NCs and encapsulating materials. The curing of encapsulating materials significantly reduces EQE. Among all the encapsulating materials investigated in this work, silicone- OE6551 enables the highest EQE (21% at excitation wavelength λex = 370 nm) after curing. Based on current findings, we have discussed the continuous efforts to advance the photoluminescent application of Si NCs.

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