Soliton mode-locked fiber laser with high-quality MBE-grown Bi2Se3 film

作     者：Runlin Miao Mingyu Tong Ke Yin Hao Ouyang Zhenyu Wang Xin Zheng Xiang’ai Cheng Tian Jiang 苗润林;童明玉;殷科;欧阳昊;王振宇;郑鑫;程湘爱;江天

作者机构：College of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangsha 410073China National Innovation Institute of Defense TechnologyAcademy of Military Sciences PLA ChinaBeijing 100071China State Key Laboratory of High Performance ComputingCollege of ComputerNational University of Defense TechnologyChangsha 410073China 

出 版 物：《Chinese Optics Letters》 (中国光学快报（英文版）)

年 卷 期：2019年第17卷第7期

页      面：54-58页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China(Nos.11802339,11805276,61805282,61801498,and 11804387) the China Postdoctoral Innovation Science Foundation(No.BX20180373) the Scientific Researches Foundation of National University of Defense Technology(Nos.ZK16-03-59,ZK18-01-03,ZK18-03-36,and ZK18-03-22) the Natural Science Foundation of Hunan Province(No.2016JJ1021) the Open Director Fund of State Key Laboratory of Pulsed Power Laser Technology(No.SKL2018ZR05) the Open Research Fund of Hunan Provincial Key Laboratory of High Energy Technology(No.GNJGJS03) the Opening Foundation of State Key Laboratory of Laser Interaction with Matter(No.SKLLIM1702) the Youth Talent Lifting Project(No.17-JCJQ-QT-004) 

主　　题：Soliton mode-locked fiber high-quality MBE-grown quality molecular 

摘      要：In this work, a soliton mode-locked erbium-doped fiber laser(EDFL) with a high-quality molecular beam epitaxy(MBE)-grown topological insulator(TI) Bi2Se3 saturable absorber(SA) is *** fabricate the SA device, a 16-layer Bi2Se3 film was grown successfully on a 100 μm thick SiO2 substrate and sandwiched directly between two fiber *** TI-SA had a saturable absorption of 1.12% and a saturable influence of 160 MW/cm^*** inserting the TI-SA into the unidirectional ring-cavity EDFL, self-starting mode-locked soliton pulse trains were obtained at a fundamental repetition rate of 19.352 *** output central wavelength, pulse energy,pulse duration, and signal to noise ratio of the radio frequency spectrum were 1530 nm,18.5 p J, 1.08 ps, and 60d Bm, *** results demonstrate that the MBE technique could provide a controllable and repeatable method for the fabrication of identical high-quality TI-SAs, which is critically important for ultra-fast pulse generation.