A statistical approach to fit Gaussian part of full-energy peaks from Si(PIN) and SDD X-ray spectrometers

作     者：LI Zhe TUO XianGuo SHI Rui YANG JianBo 

作者机构：Provincial Key Laboratory of Applied Nuclear Techniques in Geosciences Chengdu University of Technology Institute of High Energy Physics Chinese Academy of Science Southwest University of Science and Technology 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2014年第57卷第1期

页      面：19-24页

核心收录：

学科分类：08[工学] 0803[工学-光学工程] 

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.40974065,41025015) the National High Technology Research and Development Program of China(Grant No.2012AA063501) Ph.D.Programs Foundation of Ministry of Education of China(Grant No.20125122110009) 

主　　题：Gaussian distribution Si(PIN) SDD EDXRF standard deviation of energy resolution 

摘      要：A new statistical fitting approach, named Statistical Distribution-Based Analytic （SDA） method, is proposed to fit single Gaussian-shaped Ka and KI3 X-ray peaks recorded by Si（PIN） and silicon drift detector （SDD）. In this method, we use the dis- crete distribution theory to calculate standard deviation of energy resolution a. The calibration of cr and energy （E） for two de- tectors between the energy ranges of 4.5-26 keV are also completed by measuring characteristic X-ray spectra of nineteen types of pure elements. With the spectrum fraction （SF） parameter proposed in this paper, the SDA method can be used to re- solve overlapping peaks. In measured spectra, the Gaussian part of X-ray peaks can be fitted by a Gaussian function with two parameters, ~ and SF. This new fitting approach is simpler than traditional methods and it achieves relatively good results when fitting the complex X-ray spectra of national standard alloy samples detected by Si（PIN） and SDD detectors. The 3（2 values are obtained for each spectrum to assess fitting results, and the SDA fitting method gives a preferable fit for the SDD detector.