The formation and stability of Si_(1-x)C_x alloys in Si implanted with carbon ions

作     者：WANG Yinshu, LI Jinmin, JIN Yunfan, WANG Yutian, SUN Guosheng & LIN Lanying1. Department of Physics, Beijing Normal University, Beijing 100875, China 2. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 3. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China 

作者机构：Department of Physics Beijing Normal University Beijing China Institute of Semiconductors Chinese Academy of Sciences Beijing China Institute of Modern Physics Chinese Academy of Sciences Lanzhou China 

出 版 物：《Chinese Science Bulletin》 (CHINESE SCIENCE BULLETIN)

年 卷 期：2001年第46卷第3期

页      面：200-204页

核心收录：

学科分类：080503[工学-材料加工工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

主　　题：ion implantation Si1-xCx alloys stability of Si1-xCx alloys. 

摘      要：Si1-xCx alloys of carbon (C) concentration between 0.6%-1.0% were grown in Si by ion implantation and high temperature annealing. The formation of Si1-xCx alloys under different ion doses and their stability during annealing were studied. If the implanted dose was less than that for amorphizing Si crystals, the implanted C atoms would like to combine with defects produced during implantation and it was difficult to form Si1-xCx alloys after being annealed at 850℃. With the increment of implanted C ion doses, the lattice damage increased and it was easier to form Si1-xCx alloys. But the lattice strain would become saturate and only part of implanted carbon atoms would occupy the substitutional positions to form Si1-xCx alloys as the implanted carbon dose increased to a certain degree. Once Si1-xCx alloys were formed, they were stable at 950℃, but part of their strain would release as the annealing temperature increased to 1 000℃. Stability of the alloys became worse with the increment of carbon