EFFECT OF THE DEFECT STATES DENSITY ON OPTICAL BAND GAP OF CdIn_(2)O_(4)THIN FILM

作     者：H.S.San Z.G.Wu B.Li B.X.Feng 

作者机构：KeyLaboratoryforMagnetismandMagneticMaterialofMinistryofEducationLanzhouUniversityLanzhou730000China ShanghaiInstituteofTechnicalPhysicsTheChineseAcademyofSciencesShanghai200083China 

出 版 物：《Acta Metallurgica Sinica(English Letters)》 (金属学报（英文版）)

年 卷 期：2005年第18卷第3期

页      面：403-410页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：This work was supported by the National Natural Science Foundation of China(No 69876018) 

主　　题：sputtering CdIn2O4 thin film electrical property optical property 

摘      要：Transparent conducting oxides CdIn2O4 thin films were prepared by radio-frequenc y reactive sputtering from a Cd-In alloy target in Ar+O2 atmosphere. By transmis sion spectrum and Hall measurement for different samples prepared at different s ubstrate temperatures, it could be found that the carrier concentration would in crease with the decrease of substrate temperature, but absorption edge showed an abrupt variation from a blue shift to a red shift. Theoretically, the paper for mulated the effect of high-density point defects on band structures; it embodied the formation of band tailing, Burstein-Moss shift and band-gap narrowing. The density of holes will influence the magnitude of optical band gap and transmitta nce of light. Since extrapolation method does not fit degenerate semiconductor m aterials, a more accurate method of obtaining optical band gap is curve fitting. In addition, ionized impurities scattering is the main damping mechanism of the free electrons in CdIn2O4 films, the density of ionized impurities induced by a ltering substrate temperature will affect the carriers mobility.