Preparation of WO3 thin films by dip film-drawing for photoelectrochemical performance

作     者：Dongbo Xu Lili Li Weiqiang Fan Fagen Wang Hongye Bai Baodong Mao Weidong Shi 

作者机构：School of Energy and Power EngineeringJiangsu UniversityZhenjiang 212013China School of Chemistry and Chemical EngineeringJiangsu University. Zhenjiang 212013China 

出 版 物：《Chinese Journal of Chemical Engineering》 (中国化学工程学报（英文版）)

年 卷 期：2019年第27卷第5期

页      面：1207-1211页

核心收录：

学科分类：0710[理学-生物学] 0830[工学-环境科学与工程（可授工学、理学、农学学位）] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 

基　　金：Supported by the National Natural Science Foundation of China(21522603,21477050,21401082,21503142,21671083) Six Talent Peaks Project in Jiangsu Province(XCL-025) and the Chinese-German Cooperation Research Project(GZ1091) Postgraduate Research&Practice Innovation Program of Jiangsu Province(KYCX17_1774) the Excellent Youth Foundation of Jiangsu Scientific Committee(BK20170526) 

主　　题：WO3 thin films Dip film-drawing Photoelectrochemical Thicknesses Large-scale 

摘      要：Here we report the WO3 thin films on F-doped SnO2 conducting glass (FTO) substrates which were prepared by using dip film-drawing method. Dip film-drawing was a simple, convenient, economical method and in largescale to prepare photoanodes for future applications. The FTO substrates were dipped in tungstic acid solution then film-drawn included 3, 6, 9, 12 and 15 times for prepared different thicknesses of WO3 thin film photoanodes. Then the photoa no des were employed as the electrodes in photoelectrochemical property Keywords: WO3 thin films Dip film-drawing Photoelectrochemical Thicknesses Large-scale measurements, which include scan linear sweep, repeated on/off illumination cycles, electrochemical impedanee spectroscopy and incident phot on to current conversion efficiency, respectively. The results showed that the WO3 thin films dipped 9 times with 175 nm thicknesses had the best photoelectrochemical performance of 0.067 mA·cm^-2 at 1.23 V versus RHE.