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Self-limiting laser crystallization and direct writing of 2D materials

Self-limiting laser crystallization and direct writing of 2D materials

作     者:Zabihollah Ahmadi Baha Yakupoglu Nurul Azam Salah Elafandi Masoud Mahjouri-Samani Zabihollah Ahmadi;Baha Yakupoglu;Nurul Azam;Salah Elafandi;Masoud Mahjouri-Samani

作者机构:Electrical and Computer Engineering DepartmentAuburn UniversityAuburnALUnited States of America 

出 版 物:《International Journal of Extreme Manufacturing》 (极端制造(英文))

年 卷 期:2019年第1卷第1期

页      面:139-144页

核心收录:

学科分类:080901[工学-物理电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 0817[工学-化学工程与技术] 08[工学] 0807[工学-动力工程及工程热物理] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0802[工学-机械工程] 0803[工学-光学工程] 0811[工学-控制科学与工程] 

基  金:This work is supported by the Intermural Grant Program(IGP)at Auburn University 

主  题:2D materials direct laser writing laser crystallization 

摘      要:Direct growth and patterning of atomically thin two-dimensional(2D)materials on various substrates are essential steps towards enabling their potential for use in the next generation of electronic and optoelectronic *** conventional gas-phase growth techniques,however,are not compatible with direct patterning ***,the condensed-phase methods,based on metal oxide deposition and chalcogenization processes,require lengthy processing times and high ***,a novel self-limiting laser crystallization process for direct crystallization and patterning of 2D materials is *** takes advantage of significant differences between the optical properties of the amorphous and crystalline *** laser deposition is used to deposit a thin layer of stoichiometric amorphous molybdenum disulfide(MoS2)film(∼3 nm)onto the fused silica substrates.A tunable nanosecond infrared(IR)laser(1064 nm)is then employed to couple a precise amount of power and number of pulses into the amorphous materials for controlled crystallization and direct writing *** IR laser interaction with the amorphous layer results in fast heating,crystallization,and/or evaporation of the materials within a narrow processing ***,reduction of the midgap and defect states in the as crystallized layers decreases the laser coupling efficiency leading to higher tolerance to process *** deliberate design of such laser 2D material interactions allows the selflimiting crystallization phenomena to occur with increased quality and a much broader processing *** unique laser processing approach allows high-quality crystallization,direct writing,patterning,and the integration of various 2D materials into future functional devices.

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