Activation of silicon quantum dots and coupling between the active centre and the defect state of the photonic crystal in a nanolaser

作     者：黄伟其 陈汉琼 苏琴 刘世荣 秦朝建 

作者机构：Institute of Nanophotonic PhysicsKey Laboratory of Photoelectron Technology and ApplicationGuizhou University State Key Laboratory of Ore Deposit GeochemistryInstitute of GeochemistryChinese Academy of Sciences 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2012年第21卷第6期

页      面：234-238页

核心收录：

学科分类：070207[理学-光学] 07[理学] 08[工学] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：Project supported by the National Natural Science Foundation of China (Grant No. 60966002) the National Key Laboratory Fund of Surface Physics at Fudan University,(Grant No. 20090606) 

主　　题：nanolaser Si quantum dots localized states photonic crystal 

摘      要：A new nanolaser concept using silicon quantum dots （QDs） is proposed. The conduction band opened by the quantum confinement effect gives the pumping levels. Localized states in the gap due to some surface bonds on Si QDs can be formed for the activation of emission. An inversion of population can be generated between the localized states and the valence band in a QD fabricated by using a nanosecond pulse laser. Coupling between the active centres formed by localized states and the defect states of the two-dimensional （2D） photonic crystal can be used to select the model in the nanolaser.