Influence of oxygen treatment and temperature on electrical properties of the epitaxial Nb-doped SrTiO_3 films on silicon

作     者：XIANG WenFeng WANG ShaoMin ZHAO Kun 

作者机构：State Key Laboratory of Heavy Oil Processing China University of Petroleum College of Science China University of Petroleum 

出 版 物：《Science China(Physics,Mechanics & Astronomy)》 (中国科学：物理学、力学、天文学（英文版）)

年 卷 期：2013年第56卷第10期

页      面：2009-2011页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 

基　　金：supported by the National Natural Science Foundation of China(Grant No 11004251) the Basic Foundation of China University of Petroleum(Beijing)(Grant No.01JB0007) the Development Foundation of China University of Petroleum(Beijing)(Grant No.01JB0021) 

主　　题：温度依赖性 电性能 硅薄膜 钛酸锶 b掺杂 氧气 薄膜电阻 Si衬底 

摘      要：We have fabricated the epitaxial Nb-doped SrTiO3(NbSTO) thin films on Si substrates using a TiN film as the buffer *** oxygen-treatment and temperature dependence of electrical properties has been *** treatment showed the surface change of NbSTO films has immense influence on the resistance *** resistance ratio of two resistance states decreased after oxygen *** tested-temperature rising,the resistance and resistance ratio of two resistance states *** resistance switching of Pt/NbSTO junction as a function of oxygen-treatment and temperature can be explained by the charge trapping and detrapping process in the Pt/NbSTO interface,which will help understand the resistance switching mechanism of oxides.