Effect of the Transient Response in Si/Ge Parallelizing PN Junction

作     者：Weiqi HUANGt and Chaogang CHEN(Department of Physics, Guizhou Educational College, Guiyan 550003, China)Ergang CHEN(Department of Physics, Yunnan University, Kunming 650091, China)To whom correspondence should be addressed 

作者机构：Department of Physics Guizhou Educational College Guiyan 550003 China Department of Physics Yunnan University Kunming 650091 China 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：1999年第15卷第4期

页      面：383-383页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

主　　题：PN Si Ge Effect of the Transient Response in Si/Ge Parallelizing PN Junction 

摘      要：There are some new results about photovoltaic transient response in the new effect. We suggest a theoretical model to explain the effect reasonably. The theoretical calculation results agree with that in experiments.