Improvement in the intense pulsed emission stability of grown CNT films via an electroless plated Ni layer

作     者：ZENG FanGuang LI Xin LIU WeiHua QIAO ShuZhen MA HuaLi ZHANG Rui XIA LianSheng CHEN Yi LIU XingGuang ZHANG Huang 

作者机构：Department of Mathematics and Physics Zhengzhou Institute of Aeronautical Industry Management Zhengzhou 450015 China School of Electronic and Information Engineering Xi'an Jiaotong University Xi'an 710049 China Institute of Fluid Physics Chinese Academy of Engineering Physics Mianyang 621900 China 

出 版 物：《Chinese Science Bulletin》 (中国科学通报)

年 卷 期：2011年第56卷第22期

页      面：2379-2382页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：supported by the National Natural Science Foundation of China(51072184,50972132,51002143 and 60801022) the Aeronautical Science Foundation of China(2009ZE55003 and 2010ZF55013) the Basic and Advanced Technology Program of Henan(092300410139) 

主　　题：碳纳米管薄膜 化学镀镍层 发射电流 稳定性 强脉冲 生长 碳纳米管阴极 Marx发生器 

摘      要：Carbon nanotube(CNT)films were grown on silicon wafers with and without a nickel layer(Si-CNT and Ni-CNT)via the pyrolysis of iron *** nickel layer was prepared using the electroless plating *** study the emission stability of Si-CNT and Ni-CNT cathodes during intense pulsed emission,emission characteristics were measured repeatedly with a diode structure using a Marx generator as a voltage *** the peak values of the pulsed voltage,which were in the range between 1.62-1.66 MV(corresponding to electric field intensities between 11.57-11.85 V/μm),the first cycle emission current was 109.4 A for Si-CNT and 180.5 A for *** comparing the normalized emission currents of the Si-CNT and Ni-CNT cathodes,the improvement in the emission stability can be easily *** number of emission cycles necessary for the peak current to decay from 100%to 50%increased from^3 for Si-CNT to^11 for a Ni-CNT film.