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Indium doping effect on properties of ZnO nanoparticles synthesized by sol–gel method

Indium doping effect on properties of ZnO nanoparticles synthesized by sol–gel method

作     者:S Mourad J El Ghoul K Omri K Khirouni 

作者机构:Laboratory of Physics of Materials and Nanomaterials Applied at Environment (LaPhyMNE)Faculty of Sciences in Gabes Gabes University Imam Mohammad Ibn Saud Islamic University (IMSIU) College of Sciences Department of Physics 

出 版 物:《Chinese Physics B》 (中国物理B(英文版))

年 卷 期:2019年第28卷第4期

页      面:342-348页

核心收录:

学科分类:081702[工学-化学工艺] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0704[理学-天文学] 0702[理学-物理学] 

基  金:Project supported by the Deanship of Academic Research at Imam Mohamed Ibn Saud Islamic University(IMSIU) Riyadh Kingdom of Saudi Arabia (Research Project Nos.381212 and 1438H) 

主  题:In-doped ZnO nanoparticles sol–gel process structural and optical characterization 

摘      要:Pure ZnO and indium-doped ZnO(In–ZO) nanoparticles with concentrations of In ranging from 0 to 5% are synthesized by a sol–gel processing technique. The structural and optical properties of ZnO and In–ZO nanoparticles are characterized by different techniques. The structural study confirms the presence of hexagonal wurtzite phase and indicates the incorporation of In^(3+) ions at the Zn^(2+) sites. However, the optical study shows a high absorption in the UV range and an important reflectance in the visible range. The optical band gap of In–ZnO sample varies between 3.16 e V and 3.22 e V. The photoluminescence(PL) analysis reveals that two emission peaks appear: one is located at 381 nm corresponding to the near-band-edge(NBE) and the other is observed in the green region. The aim of this work is to study the effect of indium doping on the structural, morphological, and optical properties of ZnO nanoparticles.

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