Delta-doped quantum wire tunnel junction for highly concentrated solar cells

作     者：Ali Bahrami Mahyar Dehdast Shahram Mohammadnejad Habib Badri Ghavifekr 

作者机构：Optoelectronics and Nanophotonics Research Laboratory (ONRL) Electrical and Electronics Engineering DepartmentSahand University of Technology Nanoptronics Research Center Electrical and Electronics Engineering DepartmentIran University of Science and Technology Microelectronics Research Laboratory Department of Electrical Engineering Sahand University of Technology 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2019年第28卷第4期

页      面：275-279页

核心收录：

学科分类：07[理学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0702[理学-物理学] 

主　　题：delta-doping quantum wire solar cell tunnel junction 

摘      要：We propose a novel structure for tunnel junction based on delta-doped AlGaAs/GaAs quantum wires. Higher spatial confinement of quantum wires alongside the increased effective doping concentration in the delta-doped regions extremely increase the peak tunneling current and enhance the performance of tunnel junction. The proposed structure can be used as tunnel junction in the multijunction solar cells under the highest possible thermodynamically limited solar *** combination of the quantum wire with the delta-doped structure can be of benefit to the solar cells advantages including higher number of sub-bands and high degeneracy. Simulation results show a voltage drop of 40 mV due to the proposed tunnel junction used in a multijunction solar cell which presents an extremely low resistance to the achieved peak tunneling current.