Preparation of high-quality hydrogenated amorphous silicon film with a new microwave electron cyclotron resonance chemical vapour deposition system assisted with hot wire

作     者：朱秀红 陈光华 阴生毅 荣延栋 张文理 胡跃辉 

作者机构：DepartmentofMaterialsScienceandEngineeringBeijingUniversityofTechnologyBeijing100022China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2005年第14卷第4期

页      面：834-837页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：the National Basic Research Program of China (Grant G2000028201-1) 

主　　题：hydrogenated amorphous silicon (a-Si:H) films hot wire microstructure stability optoelectronic property deposition rate 

摘      要：The preparation of high-quality hydrogenated amorphous silicon (a-Si:H) film with a new microwave electron cyclotron resonance-chemical vapour deposition (MWECR-CVD) system assisted with hot wire is presented. In this system the hot wire plays an important role in perfecting the microstructure as well as improving the stability and the optoelectronic properties of the a-Si:H film. The experimental results indicate that in the microstructure of the a-Si:H film, the concentration of dihydride is decreased and a trace of microcrystalline occurs, which is useful to improve its stability and that in the optoelectronic properties of the a-Si:H film, the deposition rate reaches above 2.0nm/s and the photosensitivity increases up to 4.71×105.