RESONANT PHOTOEMISSION OF BULK CeO_(2) AND NANO-CeO_(2) FILMS

作     者：M.I. Abbas, K. Ibrahim, Z.Y. Wu, J. Zhang, F.Q. Liu and H.J. Qian (Beijing Synchrotron Radiation Laboratory, Institute of High Energy Physics, The Chinese Academy of Sciences, P.O. Box 918, Beijing 100039, China) 

作者机构：Beijing Synchrotron Radiat. Lab. Inst. of High Energy Phys. Chinese Acad. of Sci. Beijing 100039 P.O. Box 918 China 

出 版 物：《Acta Metallurgica Sinica(English Letters)》 (金属学报（英文版）)

年 卷 期：2001年第14卷第6期

页      面：539-543页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：the National Natural Science Foundation of China(NSFC)for financial support(Grant No.10074063) The Chinese Academy of Scicences(No.KJ952-S1-418) supported by 100-Talent Research Program of The Chinese Academy of Sciences 

主　　题：Nanostructured materials Optical films Oxides Photoemission Resonance 

摘      要：Photoemission behaviors of nano-CeO2 films with particle sizes ranging from 8 nm to 50 nm and bulk CeO2 in Ce 4 d-4 f absorption region have been investigated. Resonant enhancements of Ce 4 f valance band and Ce 5 p bands for nano film and bulk material have been observed. The variation of electron density of states in valance bands of nano and bulk structures of CeO2 is discussed in terms of Ce 4 d-4 f resonance.