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Negative Differential Resistance and Rectifying Effects of Diblock Co-Oligomer Molecule Devices Sandwiched between C_2N-h2D Electrodes

Negative Differential Resistance and Rectifying Effects of Diblock Co-Oligomer Molecule Devices Sandwiched between C_2N-h2D Electrodes

作     者:Meng Ye Cai-Juan Xia Bo-Qun Zhang Yue Ma 叶萌;夏蔡娟;张博群;马越

作者机构:School of Science Xi'an Polytechnic University 

出 版 物:《Chinese Physics Letters》 (中国物理快报(英文版))

年 卷 期:2019年第36卷第4期

页      面:75-78页

核心收录:

学科分类:080904[工学-电磁场与微波技术] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 

基  金:the National Natural Science Foundation of China under Grant No 11004156 the Science and Technology Star Project of Shaanxi Province under Grant No 2016KJX-45 the Graduate Innovation Foundation of Xi’an Polytechnic University under Grant No chx201880 

主  题:nonequilibrium system memory 

摘      要:Based on nonequilibrium Green s function method in combination with density functional theory, we study the electronic transport properties of dipyrimidinyl-diphenyl molecules embedded in a carbon atomic chain sandwiched between zigzag graphene nanoribbon and different edge geometries C_2N-h2D electrodes. Compared with the graphene electrodes, the C_2N-h2D electrode can cause rectifying and negative differential resistance *** C_2N-h2D with zigzag edges, a more remarkable negative differential resistance phenomenon appears, whereas armchair-edged C_2N-h2D can give rise to much better rectifying behavior. These results suggest that this system can be potentially useful for designs of logic and memory devices.

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