Magnetic properties and tunneling magnetoresistance in FeCo-SiO_2 granular films

作     者：XI Li, ZHANG Zongzhi, CHI Junhong, LI Chengxian & GE ShihuiKey Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000, China 

作者机构：Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education Lanzhou University Lanzhou China 

出 版 物：《Chinese Science Bulletin》 (CHINESE SCIENCE BULLETIN)

年 卷 期：2001年第46卷第9期

页      面：734-737页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：This work was supported by the National Natural Science Foundation of China (Grant No. 59971023) 

主　　题：tunneling magnetoresistance granular films. 

摘      要：Fefv(SiO2)1-fv granular films were fabricated by rf sputtering (fv represents the Fe volume fraction). The mi-crostructure, magnetic properties as well as the tunneling magnetoresistance effect (TMR) were systematically studied. It was found that the maximum TMR ratio is about -3.3% at fv = 0.33. Under the same condition, a series of (Fe100-x Cox)0.33(SiO2)0.67 were prepared. TMR value reaches -4.5% at x=53, while the microstructure of the film still keeps as that of Fe0.33(SiO2)0.67. The higher TMR ratio is contributed to the elevating of the spin polarization of particles. This is consistent with Inoue’s theory.