Ultraviolet and Deep-Ultraviolet Emissions from c-MgxZn1-xO/MgO Ultrathin Multilayer Heterostructures
Ultraviolet and Deep-Ultraviolet Emissions from c-MgxZn1-xO/MgO Ultrathin Multilayer Heterostructures作者机构：Department of Physics Zhejiang University Hangzhou 310027 State Key Laboratory of Silicon Materials Zhejiang University Hangzhou 310027
出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)
年 卷 期：2005年第22卷第10期
页 面：2688-2691页
核心收录：
学科分类：070207[理学-光学] 07[理学] 08[工学] 0803[工学-光学工程] 0702[理学-物理学]
基 金：Supported by the National Natural Science Foundation of China under Grant No 50472058
主 题：ZNO/ZNMGO MULTIQUANTUM WELLS THIN-FILMS ROOM-TEMPERATURE QUANTUM-WELLS BAND-GAP MGXZN1-XO GROWTH SUBSTRATE SI(111) ALLOY
摘 要：Cubic phase MgxZn1-x O/MgO multilayer heterostructures （c-Mgx Zn1-xO/MgO MHs） are grown on Si（100） and quartz substrates by reactive electron beam evaporation at low temperature （250℃）. Cross-sectional morphology observations by field-emission scanning electron microscopy show the legible interfaces of c-MgxZn1-x O/MgO MHs. X-ray diffraction demonstrates that c-MgxZn1-xO/MgO MHs are of highly （100）-oriented. Optical trans- mission investigations of c-Mgx Zn1-x O/MgO MHs on quartz substrates reveal the coexistence of the two phases, c-MgxZn1-xO and MgO. Photoluminescence examination indicates the emergence of deep-ultraviolet emission centred at about 290nm along with the blue shift of the ultraviolet emission from 405nm to 39Gnm when the nominal thickness of c-MgxZn1-xO well layers of MHs is diminished to 3nm, which is probably originated from quantum confinement effect.
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