Electron field emission characteristics of nano-catkin carbon films deposited by electron cyclotron resonance microwave plasma chemical vapour deposition

作     者：顾广瑞 吴宝嘉 金哲 Ito Toshimichi 

作者机构：Department of PhysicsCollege of ScienceYanbian University Division of ElectricalElectronic and Information EngineeringGraduate School of EngineeringOsaka University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2008年第17卷第2期

页      面：716-720页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 

主　　题：field emission carbon films nano-catkin microwave plasma chemical vapour deposition 

摘      要：This paper reported that the nano-catkin carbon films were prepared on Si substrates by means of electron cyclotron resonance microwave plasma chemical vapour deposition in a hydrogen and methane mixture. The surface morphology and the structure of the fabricated films were characterized by using scanning electron microscopes and Raman spectroscopy, respectively. The stable field emission properties with a low threshold field of 5V/μm corresponding to a current density of about 1μA/cm^2 and a current density of 3.2mA/cm^2 at an electric field of 10V/μm were obtained from the carbon film deposited at CH4 concentration of 8%. The mechanism that the threshold field decreased with the increase of the CH4 concentration and the high emission current appeared at the high CH4 concentration was explained by using the Fowler-Nordheim theory.