Hot-wire chemical vapor deposition low-loss hydrogenated amorphous silicon waveguides for silicon photonic devices

作     者：SWE Z.OO ANTULIO TARAZONA ALI Z.KHOKHAR RAFIDAH PETRA YOHANN FRANZ GORAN Z.MASHANOVICH GRAHAM T.REED ANNA C.PEACOCK HAROLD M.H.CHONG 

作者机构：School of Electronics and Computer ScienceUniversity of Southampton Optoelectronics Research CentreUniversity of Southampton School of Electrical and Electronic EngineeringNanyang Technological University 

出 版 物：《Photonics Research》 (光子学研究（英文版）)

年 卷 期：2019年第7卷第2期

页      面：193-200页

核心收录：

学科分类：070207[理学-光学] 07[理学] 0702[理学-物理学] 

基　　金：Engineering and Physical Sciences Research Council(EPSRC)(EP/L00044X/1 EP/N013247/1 EP/L02112G/1) 

主　　题：Hot-wire low-loss amorphous 

摘      要：We demonstrate low-loss hydrogenated amorphous silicon(a-Si:H) waveguides by hot-wire chemical vapor deposition(HWCVD). The effect of hydrogenation in a-Si at different deposition temperatures has been investigated and analyzed by Raman spectroscopy. We obtained an optical quality a-Si:H waveguide deposited at 230°C that has a strong Raman peak shift at 480 cm^(-1), peak width(full width at half-maximum) of 68.9 cm^(-1), and bond angle deviation of 8.98°. Optical transmission measurement shows a low propagation loss of 0.8 dB/cm at the1550 nm wavelength, which is the first, to our knowledge, report for a HWCVD a-Si:H waveguide.